2N4919

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

6.35mm

Collector Emitter Voltage (VCEO) :

60V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Width :

6.35mm

Power Dissipation :

30W

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

600mV

Voltage - Rated DC :

-60V

Mounting Type :

Through Hole

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500μA

Termination :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

hFE Min :

40

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-225AA, TO-126-3

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Elements :

1

Packaging :

Bulk

Max Power Dissipation :

30W

Pbfree Code :

yes

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Surface Mount :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Pin Count :

3

Gain Bandwidth Product :

3MHz

Max Collector Current :

3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Published :

2015

Frequency :

3MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 500mA 1V

Operating Temperature :

-65°C~150°C TJ

Collector Base Voltage (VCBO) :

60V

Length :

31.75mm

Transition Frequency :

3MHz

Base Part Number :

2N4919

Weight :

4.535924g

Current Rating :

1A

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

60V