2N4918G
- Mfr.Part #
- 2N4918G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO126
- Stock
- 5,476
- In Stock :
- 5,476
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 500μA
- Frequency :
- 3MHz
- Power Dissipation :
- 30W
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Lead Free :
- Lead Free
- Current Rating :
- 1A
- Height :
- 11.049mm
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Saturation Voltage :
- 600mV
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 30W
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- -40V
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Bulk
- Transition Frequency :
- 3MHz
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- hFE Min :
- 40
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Width :
- 2.667mm
- Length :
- 7.7216mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Pin Count :
- 3
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Base Part Number :
- 2N4918
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2N4918G
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PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N4918G Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2N4918G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4918G Applications
There are a lot of ON Semiconductor
2N4918G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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