2N4918G

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Mfr.Part #
2N4918G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 40V 1A TO126
Stock
5,476
In Stock :
5,476

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
500μA
Frequency :
3MHz
Power Dissipation :
30W
Number of Pins :
3
Operating Temperature :
-65°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 500mA 1V
Lead Free :
Lead Free
Current Rating :
1A
Height :
11.049mm
Collector Base Voltage (VCBO) :
40V
Collector Emitter Saturation Voltage :
600mV
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Transistor Application :
SWITCHING
Max Power Dissipation :
30W
Surface Mount :
No
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
5V
Voltage - Rated DC :
-40V
Package / Case :
TO-225AA, TO-126-3
Gain Bandwidth Product :
3MHz
Factory Lead Time :
2 Weeks
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Bulk
Transition Frequency :
3MHz
Max Collector Current :
3A
Radiation Hardening :
No
hFE Min :
40
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Terminal Finish :
Tin (Sn)
Weight :
4.535924g
REACH SVHC :
No SVHC
Transistor Type :
PNP
Pbfree Code :
yes
Width :
2.667mm
Length :
7.7216mm
Collector Emitter Voltage (VCEO) :
40V
Published :
2004
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
40V
JESD-609 Code :
e3
Element Configuration :
Single
Pin Count :
3
Halogen Free :
Halogen Free
Number of Elements :
1
Transistor Element Material :
SILICON
Base Part Number :
2N4918
RoHS Status :
ROHS3 Compliant
Datasheets
2N4918G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N4918G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Base Part Number:2N4918, 2N4918G pinout, 2N4918G datasheet PDF, 2N4918G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N4918G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N4918G


PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

2N4918G Overview


In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

2N4918G Features


the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz


2N4918G Applications


There are a lot of ON Semiconductor
2N4918G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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