2N4918
- Mfr.Part #
- 2N4918
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO126
- Stock
- 19,047
- In Stock :
- 19,047
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Frequency :
- 3MHz
- ECCN Code :
- EAR99
- hFE Min :
- 40
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Gain Bandwidth Product :
- 3MHz
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Transition Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Height :
- 11.049mm
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 1A
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Saturation Voltage :
- 600mV
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -40V
- Collector Base Voltage (VCBO) :
- 40V
- Length :
- 7.7216mm
- Base Part Number :
- 2N4918
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 30W
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Width :
- 2.667mm
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 500μA
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 3
- Power Dissipation :
- 30W
- Packaging :
- Bulk
- Number of Elements :
- 1
- Datasheets
- 2N4918
2N4918 Documents

PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N4918G Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2N4918G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4918G Applications
There are a lot of ON Semiconductor
2N4918G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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