2N4859A

Manufacturer :

Central Semiconductor

Product Category :

Transistors - JFETs

DS Breakdown Voltage-Min :

30V

Published :

2017

Packaging :

Bulk

Power Dissipation-Max (Abs) :

0.36W

Voltage - Breakdown (V(BR)GSS) :

30V

Drain-source On Resistance-Max :

25Ohm

Pbfree Code :

No

Mounting Type :

Through Hole

Number of Elements :

1

Surface Mount :

No

Transistor Element Material :

SILICON

Configuration :

Single

Feedback Cap-Max (Crss) :

4 pF

Reach Compliance Code :

not_compliant

Factory Lead Time :

8 Weeks

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

BOTTOM

Terminal Form :

Wire

Operating Mode :

Depletion Mode

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

O-MBCY-W3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Current - Drain (Idss) @ Vds (Vgs=0) :

50mA @ 15V

Number of Terminations :

3

FET Technology :

JUNCTION

JESD-609 Code :

e0

Current Drain (Id) - Max :

250pA

Package / Case :

TO-206AA, TO-18-3 Metal Can

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 10V VGS

ECCN Code :

EAR99

Resistance - RDS(On) :

25Ohm

HTS Code :

8541.21.00.95

Voltage - Cutoff (VGS off) @ Id :

10V @ 500pA

FET Type :

N-Channel

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~200°C TJ

Power - Max :

360mW