2N4854U

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Collector Emitter Saturation Voltage :

400mV

Power - Max :

600mW

Vce Saturation (Max) @ Ib, Ic :

400mV @ 15mA, 150mA

Mounting Type :

Surface Mount

Published :

1997

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

60V

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

40V

Current - Collector (Ic) (Max) :

600mA

Length :

6.35mm

Number of Elements :

2

RoHS Status :

Non-RoHS Compliant

Current - Collector Cutoff (Max) :

10nA ICBO

Continuous Collector Current :

600mA

Min Operating Temperature :

-65°C

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

600mW

Height :

2.032mm

hFE Min :

100

Voltage - Collector Emitter Breakdown (Max) :

40V

Width :

4.445mm

Max Operating Temperature :

200°C

Operating Temperature :

-65°C~200°C TJ

Polarity :

NPN, PNP

Max Collector Current :

600mA

Package / Case :

6-CLCC

Collector Emitter Voltage (VCEO) :

40V

Power Dissipation :

600mW

Factory Lead Time :

15 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

6-CLCC

Radiation Hardening :

No

Packaging :

Bulk

Transistor Type :

NPN, PNP