2N4416A

Manufacturer :

Central Semiconductor

Product Category :

Transistors - JFETs

Power Dissipation :

300mW

Power Gain-Min (Gp) :

4dB

Voltage - Cutoff (VGS off) @ Id :

2.5V @ 1nA

Gate to Source Voltage (Vgs) :

35V

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

35V

Package / Case :

TO-206AF, TO-72-4 Metal Can

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

300mW

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

0.015A

JESD-30 Code :

O-MBCY-W4

FET Technology :

JUNCTION

Terminal Position :

BOTTOM

Element Configuration :

Single

Feedback Cap-Max (Crss) :

1 pF

Transistor Element Material :

SILICON

Operating Mode :

Depletion Mode

JESD-609 Code :

e0

Number of Elements :

1

Packaging :

Bulk

ECCN Code :

EAR99

Continuous Drain Current (ID) :

15mA

Published :

2001

Number of Terminations :

4

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.21.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Input Capacitance (Ciss) (Max) @ Vds :

4pF @ 15V

Pbfree Code :

No

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Terminal Form :

Wire

Qualification Status :

Not Qualified

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Operating Temperature :

-65°C~200°C TJ

FET Type :

N-Channel

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant