2N4416A

Manufacturer :

Microchip Technology

Product Category :

Transistors - JFETs

Pbfree Code :

No

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Feedback Cap-Max (Crss) :

1 pF

Power Gain-Min (Gp) :

4dB

ECCN Code :

EAR99

JESD-30 Code :

O-MBCY-W4

Voltage - Cutoff (VGS off) @ Id :

2.5V @ 1nA

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Position :

BOTTOM

Operating Mode :

Depletion Mode

Factory Lead Time :

12 Weeks

Package / Case :

TO-206AF, TO-72-4 Metal Can

FET Technology :

JUNCTION

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Terminations :

4

Terminal Form :

Wire

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

Element Configuration :

Single

Mount :

Through Hole

HTS Code :

8541.21.00.75

Max Power Dissipation :

300mW

Operating Temperature :

-65°C~200°C TJ

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.015A

JESD-609 Code :

e0

Continuous Drain Current (ID) :

15mA

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Packaging :

Bulk

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Gate to Source Voltage (Vgs) :

35V

Input Capacitance (Ciss) (Max) @ Vds :

4pF @ 15V

Pin Count :

3

Transistor Application :

AMPLIFIER

Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

35V

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED