2N4416

Manufacturer :

Vishay

Product Category :

Transistors - JFETs

Gate to Source Voltage (Vgs) :

35V

Voltage - Cutoff (VGS off) @ Id :

2.5V @ 1nA

Transistor Element Material :

SILICON

Max Power Dissipation :

300mW

Terminal Form :

Wire

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-30 Code :

O-MBCY-W4

Mount :

Through Hole

Pbfree Code :

No

Factory Lead Time :

12 Weeks

Operating Mode :

Depletion Mode

Published :

2001

Operating Temperature :

-65°C~200°C TJ

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

0.015A

ECCN Code :

EAR99

FET Technology :

JUNCTION

Packaging :

Bulk

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

35V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Continuous Drain Current (ID) :

15mA

Power Gain-Min (Gp) :

4dB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

4pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Package / Case :

TO-206AF, TO-72-4 Metal Can

Number of Elements :

1

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Power Dissipation :

300mW

JESD-609 Code :

e0

Feedback Cap-Max (Crss) :

1 pF

FET Type :

N-Channel

Element Configuration :

Single