2N4299

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Mfr.Part #
2N4299
Manufacturer
Central Semiconductor
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
TRANSISTOR
Stock
33,347
In Stock :
33,347

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 50mA, 10V
Collector Current-Max (IC) :
1 A
Transistor Application :
SWITCHING
JESD-30 Code :
O-MBFM-P2
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
750mV @ 5mA, 50mA
Number of Terminals :
2
Case Connection :
COLLECTOR
Operating Temperature :
-65°C ~ 175°C (TJ)
Collector-Emitter Voltage-Max :
250 V
Reach Compliance Code :
Unknown
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
250 V
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Configuration :
Single
Current - Collector (Ic) (Max) :
1 A
ECCN Code :
EAR99
Surface Mount :
No
Subcategory :
Other Transistors
DC Current Gain-Min (hFE) :
35
HTS Code :
8541.29.00.95
VCEsat-Max :
0.75 V
Power Dissipation-Max (Abs) :
20 W
JEDEC-95 Code :
TO-66
Current - Collector Cutoff (Max) :
600μA
Polarity/Channel Type :
NPN
Power - Max :
20 W
Manufacturer :
Central Semiconductor Corp
Pin Count :
2
Terminal Position :
BOTTOM
Package / Case :
TO-213AA, TO-66-2
Product Status :
Last Time Buy
Frequency - Transition :
20MHz
Package :
Bulk
Supplier Device Package :
TO-66
Pbfree Code :
No
Series :
-
JESD-609 Code :
e0
Package Shape :
Round
Terminal Finish :
Tin/Lead (Sn/Pb)
Terminal Form :
PIN/PEG
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
2N4299
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor 2N4299 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 175°C (TJ), Mounting Type:Through Hole, Package / Case:TO-213AA, TO-66-2, 2N4299 pinout, 2N4299 datasheet PDF, 2N4299 amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor 2N4299 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



-65°C ~ 175°C (TJ) 600µA 1 Elements SILICON NPN TO-213AA, TO-66-2 Through Hole

2N4299 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 50mA, 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 5mA, 50mA.TO-66 is the supplier device package for this product.In the 250 V setting, the maximum collector-emitter voltage is set.This device displays a 250 V maximum voltage - Collector Emitter Breakdown.

2N4299 Features


the DC current gain for this device is 50 @ 50mA, 10V
the vce saturation(Max) is 750mV @ 5mA, 50mA
the supplier device package of TO-66


2N4299 Applications


There are a lot of Central
2N4299 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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