2N4250A

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Mfr.Part #
2N4250A
Manufacturer
Central Semiconductor
Package / Case
TO-106-3 Domed
Datasheet
Download
Description
TRANS PNP 60V TO126
Stock
25,078
In Stock :
25,078

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
No
Terminal Position :
BOTTOM
Packaging :
Bulk
Terminal Finish :
Tin/Lead (Sn/Pb)
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
100MHz
Number of Terminations :
3
Power Dissipation-Max (Abs) :
0.2W
Vce Saturation (Max) @ Ib, Ic :
250mV @ 500µA, 10mA
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
RoHS Status :
Non-RoHS Compliant
HTS Code :
8541.21.00.95
Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100μA 5V
Qualification Status :
Not Qualified
Transistor Application :
AMPLIFIER
JESD-609 Code :
e0
Package / Case :
TO-106-3 Domed
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector Cutoff (Max) :
10nA ICBO
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Voltage - Collector Emitter Breakdown (Max) :
60V
Power - Max :
200mW
Polarity/Channel Type :
PNP
Transistor Type :
PNP
JESD-30 Code :
O-PBCY-T3
Transistor Element Material :
SILICON
Number of Elements :
1
Datasheets
2N4250A
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor 2N4250A from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-106-3 Domed, 2N4250A pinout, 2N4250A datasheet PDF, 2N4250A amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor 2N4250A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-106-3 Domed Bulk Through Hole

2N4250A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Parts of this part have transition frequencies of 100MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

2N4250A Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
a transition frequency of 100MHz


2N4250A Applications


There are a lot of Central Semiconductor Corp
2N4250A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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