2N4250A
- Mfr.Part #
- 2N4250A
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-106-3 Domed
- Datasheet
- Download
- Description
- TRANS PNP 60V TO126
- Stock
- 25,078
- In Stock :
- 25,078
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 0.2W
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- RoHS Status :
- Non-RoHS Compliant
- HTS Code :
- 8541.21.00.95
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Qualification Status :
- Not Qualified
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e0
- Package / Case :
- TO-106-3 Domed
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Power - Max :
- 200mW
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- JESD-30 Code :
- O-PBCY-T3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Datasheets
- 2N4250A
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-106-3 Domed Bulk Through Hole
2N4250A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Parts of this part have transition frequencies of 100MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2N4250A Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
a transition frequency of 100MHz
2N4250A Applications
There are a lot of Central Semiconductor Corp
2N4250A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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