2N4250

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

0.2W

Power - Max :

200mW

JESD-30 Code :

O-PBCY-T3

Frequency - Transition :

50MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

HTS Code :

8541.21.00.95

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Polarity/Channel Type :

PNP

Qualification Status :

Not Qualified

Package / Case :

TO-106-3 Domed

Current - Collector Cutoff (Max) :

10nA ICBO

Transistor Type :

PNP

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 10mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Pbfree Code :

No

Transition Frequency :

50MHz

Surface Mount :

No

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

40V

Number of Terminations :

3

Number of Elements :

1

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED