2N4236L
- Mfr.Part #
- 2N4236L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 32,750
- In Stock :
- 32,750
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Current - Collector (Ic) (Max) :
- 1 A
- Series :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Product Category :
- Bipolar Transistors - BJT
- Subcategory :
- Transistors
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Supplier Device Package :
- TO-39 (TO-205AD)
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 100mA, 1V
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Power - Max :
- 1 W
- Mounting Type :
- Through Hole
- Brand :
- Microchip Technology
- Frequency - Transition :
- -
- Product Status :
- Active
- Manufacturer :
- Microchip
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Datasheets
- 2N4236L
PNP -65°C ~ 200°C (TJ) 1mA TO-205AD, TO-39-3 Metal Can Through Hole
2N4236L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 100mA, 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.This product comes in a TO-39 (TO-205AD) device package from the supplier.Device displays Collector Emitter Breakdown (80 V maximal voltage).
2N4236L Features
the DC current gain for this device is 40 @ 100mA, 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the supplier device package of TO-39 (TO-205AD)
2N4236L Applications
There are a lot of Microchip Technology
2N4236L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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