2N4236
- Mfr.Part #
- 2N4236
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO39
- Stock
- 16,225
- In Stock :
- 16,225
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Base Part Number :
- 2N4236
- Current - Collector Cutoff (Max) :
- 1mA
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector (Ic) (Max) :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage :
- 80V
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- RoHS Status :
- Non-RoHS Compliant
- Max Operating Temperature :
- 200°C
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 1W
- Transistor Type :
- PNP
- Mount :
- Through Hole
- Number of Pins :
- 3
- Supplier Device Package :
- TO-39 (TO-205AD)
- Published :
- 2002
- Polarity :
- NPN
- Power - Max :
- 1W
- Min Operating Temperature :
- -65°C
- Mounting Type :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Datasheets
- 2N4236
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PNP -65°C~200°C TJ 1mA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N4236 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 1A volts.
2N4236 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the supplier device package of TO-39 (TO-205AD)
2N4236 Applications
There are a lot of Microsemi Corporation
2N4236 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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