2N4235

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Mfr.Part #
2N4235
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 60V 1A TO205AD
Stock
16,232
In Stock :
16,232

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
60V
Polarity :
NPN
Collector Emitter Voltage (VCEO) :
60V
Number of Pins :
3
Published :
2007
Radiation Hardening :
No
Power - Max :
1W
Lifecycle Status :
IN PRODUCTION (Last Updated: 2 weeks ago)
Power Dissipation :
1W
Supplier Device Package :
TO-205AD
Max Power Dissipation :
1W
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Mounting Type :
Through Hole
Mount :
Through Hole
Current - Collector (Ic) (Max) :
1A
Transistor Type :
PNP
Number of Elements :
1
Package / Case :
TO-205AD, TO-39-3 Metal Can
Collector Base Voltage (VCBO) :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
1mA
Min Operating Temperature :
-65°C
Max Collector Current :
1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 100mA 1V
Max Operating Temperature :
200°C
Emitter Base Voltage (VEBO) :
7V
Packaging :
Bulk
Operating Temperature :
-65°C~200°C TJ
RoHS Status :
Non-RoHS Compliant
Datasheets
2N4235
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N4235 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-205AD, TO-39-3 Metal Can, Operating Temperature:-65°C~200°C TJ, 2N4235 pinout, 2N4235 datasheet PDF, 2N4235 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N4235 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N4235


PNP -65°C~200°C TJ 1mA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole

2N4235 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.This product comes in a TO-205AD device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

2N4235 Features


the DC current gain for this device is 40 @ 100mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the supplier device package of TO-205AD


2N4235 Applications


There are a lot of Microsemi Corporation
2N4235 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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