2N4235
- Mfr.Part #
- 2N4235
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO205AD
- Stock
- 16,232
- In Stock :
- 16,232
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 3
- Published :
- 2007
- Radiation Hardening :
- No
- Power - Max :
- 1W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Power Dissipation :
- 1W
- Supplier Device Package :
- TO-205AD
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Current - Collector (Ic) (Max) :
- 1A
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA
- Min Operating Temperature :
- -65°C
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 100mA 1V
- Max Operating Temperature :
- 200°C
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- 2N4235

PNP -65°C~200°C TJ 1mA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N4235 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.This product comes in a TO-205AD device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2N4235 Features
the DC current gain for this device is 40 @ 100mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the supplier device package of TO-205AD
2N4235 Applications
There are a lot of Microsemi Corporation
2N4235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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