2N4123TFR
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- Mfr.Part #
- 2N4123TFR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.2A TO92-3
- Stock
- 27,591
- In Stock ：
- 27,591
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 50
- Number of Pins :
- 3
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 1V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 200mA
- Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 250MHz
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 40V
- Current Rating :
- 200mA
- Frequency :
- 250MHz
- Number of Elements :
- 1
- Published :
- 1997
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Base Part Number :
- 2N4123
- Datasheets
- 2N4123TFR
NPN -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N4123TFR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 2mA 1V.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.A maximum collector current of 200mA volts can be achieved.
2N4123TFR Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
2N4123TFR Applications
There are a lot of ON Semiconductor
2N4123TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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