2N4123TF
- Mfr.Part #
- 2N4123TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.2A TO92-3
- Stock
- 42,899
- In Stock :
- 42,899
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2N4123
- Operating Temperature :
- -55°C~150°C TJ
- Frequency - Transition :
- 250MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- TO-92-3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power - Max :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 1V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector (Ic) (Max) :
- 200mA
- Datasheets
- 2N4123TF

NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N4123TF Overview
In this device, the DC current gain is 50 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 30V.
2N4123TF Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N4123TF Applications
There are a lot of ON Semiconductor
2N4123TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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