2N4123TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

250MHz

Power Dissipation :

625mW

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Mounting Type :

Through Hole

Current Rating :

200mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 2mA 1V

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

2N4123

Voltage - Collector Emitter Breakdown (Max) :

30V

Frequency :

250MHz

Max Power Dissipation :

625mW

Number of Elements :

1

Min Operating Temperature :

-55°C

Voltage - Rated DC :

40V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Frequency - Transition :

250MHz

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

200mA

Collector Emitter Breakdown Voltage :

30V

Packaging :

Tape and Box (TB)

Current - Collector (Ic) (Max) :

200mA

Mount :

Through Hole

Current - Collector Cutoff (Max) :

50nA ICBO

Polarity :

NPN

Lead Free :

Lead Free

Supplier Device Package :

TO-92-3

Collector Emitter Voltage (VCEO) :

30V

hFE Min :

50

Number of Pins :

3

Collector Base Voltage (VCBO) :

40V

Power - Max :

625mW

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN