2N4123RLRM
- Mfr.Part #
- 2N4123RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.2A TO92
- Stock
- 31,875
- In Stock :
- 31,875
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Frequency - Transition :
- 250MHz
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Terminal Finish :
- TIN LEAD
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Current - Collector (Ic) (Max) :
- 200mA
- HTS Code :
- 8541.21.00.75
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Power - Max :
- 625mW
- JESD-30 Code :
- O-PBCY-T3
- Configuration :
- Single
- Packaging :
- Tape and Box (TB)
- Number of Terminations :
- 3
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 240
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Datasheets
- 2N4123RLRM

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4123RLRM Overview
In this device, the DC current gain is 50 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.250MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.
2N4123RLRM Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 250MHz
2N4123RLRM Applications
There are a lot of Rochester Electronics, LLC
2N4123RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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