2N4123RLRM
- Mfr.Part #
- 2N4123RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.2A TO92
- Stock
- 31,875
- In Stock :
- 31,875
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 250MHz
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 1V
- Peak Reflow Temperature (Cel) :
- 240
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- HTS Code :
- 8541.21.00.75
- Qualification Status :
- Not Qualified
- Terminal Finish :
- TIN LEAD
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Pbfree Code :
- No
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 625mW
- Current - Collector (Ic) (Max) :
- 200mA
- Frequency - Transition :
- 250MHz
- JESD-30 Code :
- O-PBCY-T3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- 2N4123RLRM
2N4123RLRM Documents

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4123RLRM Overview
In this device, the DC current gain is 50 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.250MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.
2N4123RLRM Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 250MHz
2N4123RLRM Applications
There are a lot of Rochester Electronics, LLC
2N4123RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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