2N4123BU
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- Mfr.Part #
- 2N4123BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.2A TO-92
- Stock
- 13,481
- In Stock ：
- 13,481
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Power - Max :
- 625mW
- Current - Collector (Ic) (Max) :
- 200mA
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package :
- TO-92-3
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Published :
- 1997
- Frequency - Transition :
- 250MHz
- Transistor Type :
- NPN
- Base Part Number :
- 2N4123
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 1V
- Datasheets
- 2N4123BU
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N4123BU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 2mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.TO-92-3 is the supplier device package for this product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
2N4123BU Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N4123BU Applications
There are a lot of ON Semiconductor
2N4123BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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