2N4123-AP
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- Mfr.Part #
- 2N4123-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.2A TO92
- Stock
- 33,687
- In Stock ：
- 33,687
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- Power - Max :
- 625mW
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 250MHz
- Power Dissipation-Max (Abs) :
- 1.5W
- JESD-609 Code :
- e3
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 200mA
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Frequency - Transition :
- 250MHz
- JESD-30 Code :
- O-PBCY-T3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 1V
- RoHS Status :
- RoHS Compliant
- Published :
- 2008
- Datasheets
- 2N4123-AP
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4123-AP Overview
DC current gain in this device equals 50 @ 2mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.As a result, the part has a transition frequency of 250MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N4123-AP Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 250MHz
2N4123-AP Applications
There are a lot of Micro Commercial Co
2N4123-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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