2N4036
- Mfr.Part #
- 2N4036
- Manufacturer
- onsemi
- Package / Case
- TO-39
- Datasheet
- Download
- Description
- TRANS PNP 65V 1A TO39
- Stock
- 10,380
- In Stock :
- 10,380
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-39
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Published :
- 2004
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 15mA, 150mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- DC Current Gain-Min (hFE) :
- 20
- Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 90V
- Polarity :
- PNP
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Frequency :
- 60MHz
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 65V
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 60MHz
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 1W
- Lead Free :
- Lead Free
- Frequency - Transition :
- 60MHz
- Max Collector Current :
- 1A
- Power Dissipation :
- 7W
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-39
- Transition Frequency :
- 60MHz
- Max Operating Temperature :
- 150°C
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Collector Emitter Voltage (VCEO) :
- 65V
- Power - Max :
- 1W
- hFE Min :
- 20
- Min Operating Temperature :
- -65°C
- Emitter Base Voltage (VEBO) :
- -7V
- Pin Count :
- 3
- Turn Off Time-Max (toff) :
- 700ns
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Series :
- --
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 65V
- Datasheets
- 2N4036
PNP -65°C ~ 200°C (TJ) 1µA (ICBO) 1 Elements 3 Terminations TO-39 Bulk Through Hole
2N4036 Overview
DC current gain in this device equals 40 @ 150mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 15mA, 150mA.An emitter's base voltage can be kept at -7V to gain high efficiency.As a result, the part has a transition frequency of 60MHz.Product comes in TO-39 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 1A volts.
2N4036 Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 650mV @ 15mA, 150mA
the emitter base voltage is kept at -7V
a transition frequency of 60MHz
the supplier device package of TO-39
2N4036 Applications
There are a lot of Central Semiconductor
2N4036 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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