2N3960UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

20V

Number of Pins :

4

Configuration :

Single

Max Power Dissipation :

400mW

Transistor Element Material :

SILICON

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

10μA ICBO

Power - Max :

400mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 1V

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~200°C TJ

Collector Emitter Voltage (VCEO) :

12V

Packaging :

Bulk

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 3mA, 30mA

JESD-30 Code :

R-CDSO-N3

Terminal Position :

Dual

Number of Terminations :

3

Mount :

Surface Mount

Package / Case :

3-SMD, No Lead