2N3960
- Mfr.Part #
- 2N3960
- Manufacturer
- Microsemi
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 12V TO18
- Stock
- 38,446
- In Stock :
- 38,446
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pbfree Code :
- No
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 20V
- Pin Count :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 30mA
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Configuration :
- Single
- Terminal Form :
- Wire
- Mount :
- Through Hole
- Power - Max :
- 400mW
- HTS Code :
- 8541.21.00.95
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 1V
- Max Power Dissipation :
- 400mW
- Terminal Position :
- BOTTOM
- Terminal Finish :
- TIN LEAD
- Datasheets
- 2N3960

NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N3960 Overview
In this device, the DC current gain is 60 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 3mA, 30mA.
2N3960 Features
the DC current gain for this device is 60 @ 10mA 1V
the vce saturation(Max) is 300mV @ 3mA, 30mA
2N3960 Applications
There are a lot of Microsemi Corporation
2N3960 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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