2N3960

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Mfr.Part #
2N3960
Manufacturer
Microsemi
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 12V TO18
Stock
38,446
In Stock :
38,446

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2007
Number of Elements :
1
Current - Collector Cutoff (Max) :
10μA ICBO
Pbfree Code :
No
Package / Case :
TO-206AA, TO-18-3 Metal Can
Number of Terminations :
3
JESD-609 Code :
e0
Collector Base Voltage (VCBO) :
20V
Pin Count :
3
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
12V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 3mA, 30mA
Number of Pins :
3
Transistor Application :
SWITCHING
Packaging :
Bulk
Transistor Element Material :
SILICON
RoHS Status :
Non-RoHS Compliant
Operating Temperature :
-65°C~200°C TJ
Polarity/Channel Type :
NPN
Transistor Type :
NPN
Configuration :
Single
Terminal Form :
Wire
Mount :
Through Hole
Power - Max :
400mW
HTS Code :
8541.21.00.95
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 1V
Max Power Dissipation :
400mW
Terminal Position :
BOTTOM
Terminal Finish :
TIN LEAD
Datasheets
2N3960
Introducing Transistors - Bipolar (BJT) - Single Microsemi 2N3960 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-206AA, TO-18-3 Metal Can, Number of Terminations:3, Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, 2N3960 pinout, 2N3960 datasheet PDF, 2N3960 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi 2N3960 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microsemi 2N3960


NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole

2N3960 Overview


In this device, the DC current gain is 60 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 3mA, 30mA.

2N3960 Features


the DC current gain for this device is 60 @ 10mA 1V
the vce saturation(Max) is 300mV @ 3mA, 30mA


2N3960 Applications


There are a lot of Microsemi Corporation
2N3960 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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