2N3906ZL1G
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- Mfr.Part #
- 2N3906ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92
- Stock
- 29,243
- In Stock ：
- 29,243
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Unknown
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 40V
- Current Rating :
- 200mA
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 400mV
- Transistor Type :
- PNP
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Base Part Number :
- 2N3906
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-30 Code :
- O-PBCY-T3
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Additional Feature :
- EUROPEAN PART NUMBER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 250MHz
- Lead Free :
- Lead Free
- hFE Min :
- 60
- Max Collector Current :
- 200mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 300ns
- JESD-609 Code :
- e1
- Collector Emitter Saturation Voltage :
- 400mV
- Element Configuration :
- Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transition Frequency :
- 250MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- HTS Code :
- 8541.21.00.75
- Turn On Time-Max (ton) :
- 70ns
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 40V
- Mounting Type :
- Through Hole
- Published :
- 2008
- Datasheets
- 2N3906ZL1G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906ZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 250MHz is present in the part.Collector current can be as low as 200mA volts at its maximum.
2N3906ZL1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 250MHz
2N3906ZL1G Applications
There are a lot of ON Semiconductor
2N3906ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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