2N3906ZL1
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- Mfr.Part #
- 2N3906ZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92
- Stock
- 18,826
- In Stock ：
- 18,826
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- hFE Min :
- 60
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 200mA
- Transition Frequency :
- 250MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn Off Time-Max (toff) :
- 300ns
- Collector Base Voltage (VCBO) :
- 40V
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 250MHz
- Voltage - Rated DC :
- 40V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- 400mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Turn On Time-Max (ton) :
- 70ns
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Additional Feature :
- EUROPEAN PART NUMBER
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Current Rating :
- 200mA
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.21.00.75
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Base Part Number :
- 2N3906
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- JESD-30 Code :
- O-PBCY-T3
- Datasheets
- 2N3906ZL1
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906ZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 250MHz is present in the part.Collector current can be as low as 200mA volts at its maximum.
2N3906ZL1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 250MHz
2N3906ZL1G Applications
There are a lot of ON Semiconductor
2N3906ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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