2N3906TF
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- Mfr.Part #
- 2N3906TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 1,918
- In Stock ：
- 1,918
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 7 Weeks
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -250mV
- Frequency :
- 250MHz
- Gain Bandwidth Product :
- 250MHz
- ECCN Code :
- EAR99
- Weight :
- 240mg
- Max Collector Current :
- 200mA
- Transition Frequency :
- 250MHz
- Collector Emitter Breakdown Voltage :
- -40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Height :
- 5.33mm
- Collector Base Voltage (VCBO) :
- -40V
- Max Breakdown Voltage :
- 160V
- Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Turn On Time-Max (ton) :
- 70ns
- Published :
- 2007
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Current Rating :
- -200mA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Length :
- 5.2mm
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- -40V
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- 2N3906
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Width :
- 4.19mm
- hFE Min :
- 100
- Datasheets
- 2N3906TF
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3906TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 160V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TF Applications
There are a lot of ON Semiconductor
2N3906TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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