2N3906TAR
- Mfr.Part #
- 2N3906TAR
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 24,748
- In Stock :
- 24,748
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 250MHz
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Weight :
- 240mg
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -40V
- Lead Free :
- Lead Free
- Max Collector Current :
- 200mA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tape and Box (TB)
- Pbfree Code :
- yes
- Current Rating :
- -200mA
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 40V
- Transition Frequency :
- 250MHz
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Transistor Type :
- PNP
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Frequency :
- 250MHz
- Height :
- 5.33mm
- Max Power Dissipation :
- 625mW
- hFE Min :
- 100
- Power Dissipation :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Turn On Time-Max (ton) :
- 70ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Length :
- 5.2mm
- Base Part Number :
- 2N3906
- Collector Base Voltage (VCBO) :
- -40V
- Collector Emitter Saturation Voltage :
- -250mV
- Factory Lead Time :
- 6 Weeks
- Width :
- 4.19mm
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2N3906TAR

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TAR Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TAR Applications
There are a lot of ON Semiconductor
2N3906TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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