2N3906TAR
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- Mfr.Part #
- 2N3906TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 14,310
- In Stock ：
- 14,310
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 250MHz
- Number of Pins :
- 3
- Width :
- 4.19mm
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Base Part Number :
- 2N3906
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Frequency :
- 250MHz
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 625mW
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Max Breakdown Voltage :
- 40V
- hFE Min :
- 100
- Voltage - Rated DC :
- -40V
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 200mA
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- -40V
- Power Dissipation :
- 625mW
- Length :
- 5.2mm
- Published :
- 2008
- Height :
- 5.33mm
- Weight :
- 240mg
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Current Rating :
- -200mA
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 70ns
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Saturation Voltage :
- -250mV
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- 2N3906TAR
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TAR Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TAR Applications
There are a lot of ON Semiconductor
2N3906TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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