2N3906TAR
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- Mfr.Part #
- 2N3906TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 14,310
- In Stock ：
- 14,310
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Pins :
- 3
- Voltage - Rated DC :
- -40V
- ECCN Code :
- EAR99
- Frequency :
- 250MHz
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Turn On Time-Max (ton) :
- 70ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- hFE Min :
- 100
- Width :
- 4.19mm
- Base Part Number :
- 2N3906
- Transition Frequency :
- 250MHz
- Height :
- 5.33mm
- Weight :
- 240mg
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Length :
- 5.2mm
- Max Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 250MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Max Collector Current :
- 200mA
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Current Rating :
- -200mA
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Collector Base Voltage (VCBO) :
- -40V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -250mV
- Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Published :
- 2008
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Datasheets
- 2N3906TAR
2N3906TAR Documents
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TAR Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TAR Applications
There are a lot of ON Semiconductor
2N3906TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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