2N3906TA
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- Mfr.Part #
- 2N3906TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 1,688
- In Stock ：
- 1,688
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- REACH SVHC :
- No SVHC
- Turn On Time-Max (ton) :
- 70ns
- Lead Free :
- Lead Free
- Width :
- 4.19mm
- ECCN Code :
- EAR99
- Max Collector Current :
- 200mA
- Transistor Type :
- PNP
- Max Power Dissipation :
- 625mW
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Element Configuration :
- Single
- Base Part Number :
- 2N3906
- Collector Base Voltage (VCBO) :
- -40V
- Number of Elements :
- 1
- Published :
- 2007
- Length :
- 5.2mm
- Terminal Position :
- BOTTOM
- Weight :
- 240mg
- Current Rating :
- -200mA
- Voltage - Rated DC :
- -40V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 250MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency :
- 250MHz
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -250mV
- Max Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Transition Frequency :
- 250MHz
- Height :
- 5.33mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- Datasheets
- 2N3906TA
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2N3906TA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TA Applications
There are a lot of ON Semiconductor
2N3906TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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