2N3906TA
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- Mfr.Part #
- 2N3906TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 1,688
- In Stock ：
- 1,688
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 5.2mm
- Weight :
- 240mg
- Max Power Dissipation :
- 625mW
- Max Collector Current :
- 200mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Type :
- PNP
- Turn On Time-Max (ton) :
- 70ns
- Collector Emitter Breakdown Voltage :
- 40V
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- -40V
- Voltage - Rated DC :
- -40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 5.33mm
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- 2N3906
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Width :
- 4.19mm
- Current Rating :
- -200mA
- Transition Frequency :
- 250MHz
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Max Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Published :
- 2007
- Packaging :
- Tape and Box (TB)
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mount :
- Through Hole
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -250mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 250MHz
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Frequency :
- 250MHz
- JESD-609 Code :
- e3
- Datasheets
- 2N3906TA
2N3906TA Documents
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2N3906TA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TA Applications
There are a lot of ON Semiconductor
2N3906TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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