2N3906RL1G
- Mfr.Part #
- 2N3906RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92
- Stock
- 30,439
- In Stock :
- 30,439
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Terminal Position :
- BOTTOM
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 250MHz
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Turn Off Time-Max (toff) :
- 300ns
- JESD-609 Code :
- e1
- Configuration :
- Single
- Terminal Finish :
- TIN SILVER COPPER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Additional Feature :
- EUROPEAN PART NUMBER
- Current - Collector (Ic) (Max) :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Surface Mount :
- No
- Turn On Time-Max (ton) :
- 70ns
- JESD-30 Code :
- O-PBCY-T3
- Transition Frequency :
- 250MHz
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 625mW
- Datasheets
- 2N3906RL1G

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3906RL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Parts of this part have transition frequencies of 250MHz.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
2N3906RL1G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 250MHz
2N3906RL1G Applications
There are a lot of Rochester Electronics, LLC
2N3906RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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