2N3906G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

-40V

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2012

Packaging :

Bag

Terminal Position :

BOTTOM

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material :

SILICON

Turn On Time-Max (ton) :

70ns

Number of Elements :

1

Collector Emitter Saturation Voltage :

-400mV

Collector Emitter Breakdown Voltage :

40V

Transition Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

-5V

Mount :

Through Hole

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

400mV

Factory Lead Time :

10 Weeks

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 100mA 1V

JESD-30 Code :

O-PBCY-T3

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

250MHz

Max Collector Current :

200mA

Turn Off Time-Max (toff) :

300ns

Number of Terminations :

3

Transistor Application :

SWITCHING