2N3906BU
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- Mfr.Part #
- 2N3906BU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 3,246
- In Stock ：
- 3,246
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -200mA
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 625mW
- Weight :
- 179mg
- Lead Free :
- Lead Free
- Width :
- 4.19mm
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 250MHz
- Length :
- 5.2mm
- Power Dissipation :
- 625mW
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Voltage - Rated DC :
- -40V
- Collector Base Voltage (VCBO) :
- -40V
- Height :
- 5.33mm
- Mount :
- Through Hole
- Transition Frequency :
- 250MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 200mA
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- -400mV
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn On Time-Max (ton) :
- 70ns
- Published :
- 2007
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Frequency :
- 250MHz
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- 2N3906
- Datasheets
- 2N3906BU
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N3906BU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.Collector current can be as low as 200mA volts at its maximum.
2N3906BU Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906BU Applications
There are a lot of ON Semiconductor
2N3906BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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