2N3906BU
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- Mfr.Part #
- 2N3906BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 3,246
- In Stock ：
- 3,246
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Base Part Number :
- 2N3906
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.19mm
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 250MHz
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Frequency :
- 250MHz
- Collector Emitter Saturation Voltage :
- -400mV
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- -200mA
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 179mg
- Packaging :
- Bulk
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 5.2mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 250MHz
- Lead Free :
- Lead Free
- Published :
- 2007
- Max Collector Current :
- 200mA
- Turn On Time-Max (ton) :
- 70ns
- Height :
- 5.33mm
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- -40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Mount :
- Through Hole
- Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Datasheets
- 2N3906BU
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N3906BU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.Collector current can be as low as 200mA volts at its maximum.
2N3906BU Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906BU Applications
There are a lot of ON Semiconductor
2N3906BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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