2N3906
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- Mfr.Part #
- 2N3906
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92
- Stock
- 3,738
- In Stock ：
- 3,738
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Frequency - Transition :
- 250MHz
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 200mA
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 100mA 1V
- Transition Frequency :
- 250MHz
- Number of Terminations :
- 3
- Published :
- 2012
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 70ns
- Collector Emitter Breakdown Voltage :
- 40V
- Mount :
- Through Hole
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Turn Off Time-Max (toff) :
- 300ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -40V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-30 Code :
- O-PBCY-T3
- Packaging :
- Bag
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -400mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Datasheets
- 2N3906
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bag Through Hole
2N3906-G Overview
In this device, the DC current gain is 30 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
2N3906-G Features
the DC current gain for this device is 30 @ 100mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
2N3906-G Applications
There are a lot of Comchip Technology
2N3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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