2N3904TF
- Mfr.Part #
- 2N3904TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92-3
- Stock
- 1,734
- In Stock :
- 1,734
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.19mm
- Weight :
- 240mg
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 300MHz
- Frequency :
- 300MHz
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Published :
- 2007
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Base Part Number :
- 2N3904
- Height :
- 8.77mm
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Turn On Time-Max (ton) :
- 70ns
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Current Rating :
- 200mA
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Max Collector Current :
- 200mA
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Transition Frequency :
- 300MHz
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Length :
- 5.2mm
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Voltage (VCEO) :
- 40V
- Turn Off Time-Max (toff) :
- 250ns
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Max Junction Temperature (Tj) :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 300mV
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 625mW
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- 2N3904TF

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3904TFR Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 200mA volts.
2N3904TFR Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904TFR Applications
There are a lot of ON Semiconductor
2N3904TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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