2N3904TA
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- Mfr.Part #
- 2N3904TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92-3
- Stock
- 49,448
- In Stock ：
- 49,448
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 200mA
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Weight :
- 240mg
- Packaging :
- Tape and Box (TB)
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 300mV
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Base Part Number :
- 2N3904
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Junction Temperature (Tj) :
- 150°C
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 40V
- hFE Min :
- 100
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Contact Plating :
- Tin
- Transition Frequency :
- 300MHz
- Turn Off Time-Max (toff) :
- 250ns
- Number of Pins :
- 3
- Max Collector Current :
- 200mA
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 40V
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 60V
- Length :
- 5.2mm
- Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 300MHz
- Turn On Time-Max (ton) :
- 70ns
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 40V
- Height :
- 8.77mm
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- JESD-609 Code :
- e3
- Width :
- 4.19mm
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Datasheets
- 2N3904TA
2N3904TA Documents
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3904TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2N3904TA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904TA Applications
There are a lot of ON Semiconductor
2N3904TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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