2N3904RLRMG
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- Mfr.Part #
- 2N3904RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92
- Stock
- 40,943
- In Stock ：
- 40,943
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Pin Count :
- 3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Turn Off Time-Max (toff) :
- 250ns
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Type :
- NPN
- Turn On Time-Max (ton) :
- 70ns
- Lead Free :
- Lead Free
- Published :
- 2007
- Max Breakdown Voltage :
- 40V
- Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Voltage - Rated DC :
- 40V
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 40V
- Base Part Number :
- 2N3904
- Transition Frequency :
- 300MHz
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Current Rating :
- 200mA
- Max Collector Current :
- 200mA
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 300mV
- Packaging :
- Cut Tape (CT)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 40V
- Datasheets
- 2N3904RLRMG
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Cut Tape (CT) Through Hole
2N3904RLRMG Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 200mA volts is possible.
2N3904RLRMG Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RLRMG Applications
There are a lot of ON Semiconductor
2N3904RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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