2N3904RLRA
- Mfr.Part #
- 2N3904RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92
- Stock
- 970
- In Stock :
- 970
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Transition Frequency :
- 300MHz
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 30
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 100μA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50nA
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Max Collector Current :
- 200mA
- Pbfree Code :
- No
- Voltage - Rated DC :
- 40V
- Turn Off Time-Max (toff) :
- 250ns
- Turn On Time-Max (ton) :
- 70ns
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 625mW
- RoHS Status :
- Non-RoHS Compliant
- Current Rating :
- 200mA
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 240
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 625mW
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Base Part Number :
- 2N3904
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- hFE Min :
- 40
- Mounting Type :
- Through Hole
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 1mA, 10mA
- Datasheets
- 2N3904RLRA

NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Cut Tape (CT) Through Hole
2N3904RLRA Overview
This device has a DC current gain of 40 @ 100μA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.In this part, there is a transition frequency of 300MHz.The maximum collector current is 200mA volts.
2N3904RLRA Features
the DC current gain for this device is 40 @ 100μA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 200mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RLRA Applications
There are a lot of ON Semiconductor
2N3904RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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