2N3904RL1G

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Mfr.Part #
2N3904RL1G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 40V 0.2A TO92
Stock
25,797
In Stock :
25,797

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
625mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 1V
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
SWITCHING
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Terminal Position :
BOTTOM
Current Rating :
200mA
Transistor Type :
NPN
Number of Elements :
1
Number of Terminations :
3
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
300mV
hFE Min :
40
Published :
2007
JESD-609 Code :
e1
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Additional Feature :
EUROPEAN PART NUMBER
Packaging :
Tape and Reel (TR)
RoHS Status :
RoHS Compliant
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
Gain Bandwidth Product :
300MHz
Turn Off Time-Max (toff) :
250ns
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
40V
Pin Count :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
300mV @ 5mA, 50mA
Element Configuration :
Single
Collector Base Voltage (VCBO) :
60V
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
40V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Max Collector Current :
200mA
Max Power Dissipation :
625mW
REACH SVHC :
No SVHC
Base Part Number :
2N3904
Max Breakdown Voltage :
40V
Lead Free :
Lead Free
Turn On Time-Max (ton) :
70ns
ECCN Code :
EAR99
Transition Frequency :
300MHz
Emitter Base Voltage (VEBO) :
6V
Voltage - Rated DC :
40V
Frequency :
300MHz
Datasheets
2N3904RL1G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N3904RL1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Base Part Number:2N3904, 2N3904RL1G pinout, 2N3904RL1G datasheet PDF, 2N3904RL1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N3904RL1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N3904RL1G


NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

2N3904RL1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.

2N3904RL1G Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz


2N3904RL1G Applications


There are a lot of ON Semiconductor
2N3904RL1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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