2N3904NLBU

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Mfr.Part #
2N3904NLBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 40V 0.2A TO92-3
Stock
43,483
In Stock :
43,483

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
100
Collector Base Voltage (VCBO) :
60V
Packaging :
Bulk
Collector Emitter Saturation Voltage :
300mV
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 1V
Weight :
178.2mg
Transistor Type :
NPN
Max Power Dissipation :
625mW
Gain Bandwidth Product :
300MHz
Vce Saturation (Max) @ Ib, Ic :
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage :
40V
Emitter Base Voltage (VEBO) :
6V
Current Rating :
200mA
Base Part Number :
2N3904
Mount :
Through Hole
Max Collector Current :
200mA
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Collector Emitter Voltage (VCEO) :
300mV
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
40V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Datasheets
2N3904NLBU
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N3904NLBU from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2N3904, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, 2N3904NLBU pinout, 2N3904NLBU datasheet PDF, 2N3904NLBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N3904NLBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N3904NLBU


NPN -55°C~150°C TJ TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

2N3904NLBU Overview


This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 200mA volts is possible.

2N3904NLBU Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA


2N3904NLBU Applications


There are a lot of ON Semiconductor
2N3904NLBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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