2N3904H
- Mfr.Part #
- 2N3904H
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR
- Stock
- 25,000
- In Stock :
- 25,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Min Operating Temperature :
- -55 °C
- hFE Min :
- 30
- Power Dissipation :
- 625 mW
- Collector Emitter Breakdown Voltage :
- 40 V
- Max Operating Temperature :
- 150 °C
- Max Collector Current :
- 200 mA
- RoHS :
- Non-Compliant
- Collector Base Voltage (VCBO) :
- 60 V
- Series :
- *
- Package :
- Bulk
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 300 mV
- Collector Emitter Voltage (VCEO) :
- 40 V
- Emitter Base Voltage (VEBO) :
- 6 V
- Product Status :
- Active
- Height :
- 9.33 mm
- Max Junction Temperature (Tj) :
- 150 °C
- Datasheets
- 2N3904H

1 Elements
2N3904H Overview
Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300 mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6 V.During maximum operation, collector current can be as low as 200 mA volts.
2N3904H Features
a collector emitter saturation voltage of 300 mV
the emitter base voltage is kept at 6 V
2N3904H Applications
There are a lot of onsemi
2N3904H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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