2N3904BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Published :

2007

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Turn On Time-Max (ton) :

70ns

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Max Collector Current :

200mA

Packaging :

Bulk

Factory Lead Time :

6 Weeks

Gain Bandwidth Product :

300MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Mounting Type :

Through Hole

Current Rating :

200mA

Length :

5.2mm

Element Configuration :

Single

Manufacturer Package Identifier :

MKT-2A03DREV4

Power Dissipation :

625mW

Emitter Base Voltage (VEBO) :

6V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

300mV

Pbfree Code :

yes

Transition Frequency :

300MHz

Height :

5.33mm

Transistor Application :

SWITCHING

Number of Elements :

1

Turn Off Time-Max (toff) :

250ns

Collector Emitter Breakdown Voltage :

40V

Weight :

179mg

hFE Min :

100

Number of Pins :

3

Mount :

Through Hole

Number of Terminations :

3

Frequency :

300MHz

Width :

4.19mm

Max Power Dissipation :

625mW

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

40V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Base Part Number :

2N3904

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

60V

Polarity/Channel Type :

NPN

Voltage - Rated DC :

60V