2N3867U4
- Mfr.Part #
- 2N3867U4
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 3,160
- In Stock :
- 3,160
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- -
- Transistor Type :
- PNP
- Product Category :
- Bipolar Transistors - BJT
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Subcategory :
- Transistors
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- -
- Supplier Device Package :
- U4
- Product Status :
- Active
- Package / Case :
- 3-SMD, No Lead
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1.5A, 2V
- Power - Max :
- 1 W
- Brand :
- Microchip Technology
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 3 A
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Product Type :
- BJTs - Bipolar Transistors
- Manufacturer :
- Microchip
- Datasheets
- 2N3867U4
PNP -65°C ~ 200°C (TJ) 100μA (ICBO) 3-SMD, No Lead Surface Mount
2N3867U4 Overview
In this device, the DC current gain is 40 @ 1.5A, 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 250mA, 2.5A.Product comes in the supplier's device package U4.There is a 40 V maximal voltage in the device due to collector-emitter breakdown.
2N3867U4 Features
the DC current gain for this device is 40 @ 1.5A, 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the supplier device package of U4
2N3867U4 Applications
There are a lot of Microchip Technology
2N3867U4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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