2N3819

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Type :

N-Channel JFET

Drain to Source Voltage (Vdss) :

25V

Transistor Application :

AMPLIFIER

FET Technology :

JUNCTION

Terminal Position :

BOTTOM

Surface Mount :

No

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

20mA

Published :

2001

Operating Temperature (Max) :

150°C

Max Power Dissipation :

360mW

Pbfree Code :

No

Feedback Cap-Max (Crss) :

4 pF

Number of Terminations :

3

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.02A

JESD-30 Code :

O-PBCY-T3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Operating Mode :

Depletion Mode

JESD-609 Code :

e0

Reach Compliance Code :

not_compliant

Pin Count :

3

Transistor Element Material :

SILICON

Element Configuration :

Single

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

25V

Terminal Form :

THROUGH-HOLE

Weight :

453.59237mg

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

HTS Code :

8541.21.00.95

Power Dissipation :

360mW