2N3819

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation :

360mW

Surface Mount :

No

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

20mA

JESD-609 Code :

e0

Drain Current-Max (Abs) (ID) :

0.02A

Transistor Type :

N-Channel JFET

Operating Mode :

Depletion Mode

Reach Compliance Code :

not_compliant

Weight :

453.59237mg

HTS Code :

8541.21.00.95

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

JESD-30 Code :

O-PBCY-T3

Terminal Position :

BOTTOM

Feedback Cap-Max (Crss) :

4 pF

FET Technology :

JUNCTION

Max Power Dissipation :

360mW

Packaging :

Bulk

Terminal Form :

THROUGH-HOLE

Terminal Finish :

Tin/Lead (Sn/Pb)

Pin Count :

3

Drain to Source Voltage (Vdss) :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON

Pbfree Code :

No

Qualification Status :

Not Qualified

Operating Temperature (Max) :

150°C

Factory Lead Time :

6 Weeks

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Published :

2001