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  5. 2N3417_D75Z
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    2N3417_D75Z

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    Mfr.Part #
    2N3417_D75Z
    Manufacturer
    onsemi
    Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Datasheet
    Download
    Description
    TRANS NPN 50V 0.5A TO92-3
    Stock
    40,458
    In Stock ：
    40,458

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    Manufacturer :
    onsemi
    Product Category :
    Transistors - Bipolar (BJT) - Single
    Operating Temperature :
    -55°C~150°C TJ
    Power - Max :
    625mW
    Mounting Type :
    Through Hole
    Base Part Number :
    2N3417
    Voltage - Collector Emitter Breakdown (Max) :
    50V
    DC Current Gain (hFE) (Min) @ Ic, Vce :
    180 @ 2mA 4.5V
    Transistor Type :
    NPN
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Package / Case :
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Packaging :
    Tape and Box (TB)
    Current - Collector Cutoff (Max) :
    100nA ICBO
    Vce Saturation (Max) @ Ib, Ic :
    300mV @ 3mA, 50mA
    Current - Collector (Ic) (Max) :
    500mA
    Datasheets
    2N3417_D75Z
    Introducing Transistors - Bipolar (BJT) - Single onsemi 2N3417_D75Z from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature：-55°C~150°C TJ, Mounting Type：Through Hole, Base Part Number：2N3417, Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), 2N3417_D75Z pinout, 2N3417_D75Z datasheet PDF, 2N3417_D75Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N3417_D75Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

    onsemi 2N3417_D75Z


    NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

    2N3417_D75Z Overview


    As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 2mA 4.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 3mA, 50mA.Device displays Collector Emitter Breakdown (50V maximal voltage).

    2N3417_D75Z Features


    the DC current gain for this device is 180 @ 2mA 4.5V
    the vce saturation(Max) is 300mV @ 3mA, 50mA


    2N3417_D75Z Applications


    There are a lot of ON Semiconductor
    2N3417_D75Z applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting
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