2N3417_D74Z

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Mfr.Part #
2N3417_D74Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 50V 0.5A TO92-3
Stock
25,703
In Stock :
25,703

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
625mW
Max Collector Current :
500mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Collector Emitter Saturation Voltage :
300mV
Emitter Base Voltage (VEBO) :
5V
Mounting Type :
Through Hole
Max Power Dissipation :
625mW
Collector Emitter Breakdown Voltage :
50V
Mount :
Through Hole
Number of Elements :
1
Voltage - Rated DC :
50V
Transistor Type :
NPN
Current Rating :
500mA
Number of Pins :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Base Part Number :
2N3417
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
50V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 3mA, 50mA
hFE Min :
180
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
50V
Packaging :
Tape and Box (TB)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
RoHS Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 2mA 4.5V
Datasheets
2N3417_D74Z
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N3417_D74Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, Number of Pins:3, Base Part Number:2N3417, Operating Temperature:-55°C~150°C TJ, 2N3417_D74Z pinout, 2N3417_D74Z datasheet PDF, 2N3417_D74Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N3417_D74Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N3417_D74Z


NPN -55°C~150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2N3417_D74Z Overview


In this device, the DC current gain is 180 @ 2mA 4.5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 3mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).Maximum collector currents can be below 500mA volts.

2N3417_D74Z Features


the DC current gain for this device is 180 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA


2N3417_D74Z Applications


There are a lot of ON Semiconductor
2N3417_D74Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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