2N3108
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- Mfr.Part #
- 2N3108
- Manufacturer
- onsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 60V TO39
- Stock
- 1,765
- In Stock ：
- 1,765
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10nA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Type :
- NPN
- Power - Max :
- 800mW
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-39
- Packaging :
- Bulk
- Base Part Number :
- 2N3108
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA1V
- Datasheets
- 2N3108
NPN 10nA TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N3108 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100mA, 1A.This product comes in a TO-39 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).
2N3108 Features
the DC current gain for this device is 40 @ 150mA1V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-39
2N3108 Applications
There are a lot of ON Semiconductor
2N3108 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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