2N3057A
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- Mfr.Part #
- 2N3057A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO46-3
- Stock
- 32,412
- In Stock ：
- 32,412
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Published :
- 2007
- Max Collector Current :
- 1A
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Power Dissipation :
- 500mW
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Collector Base Voltage (VCBO) :
- 140V
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Max Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN LEAD
- Pbfree Code :
- No
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 7V
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10nA
- Configuration :
- Single
- Pin Count :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 80V
- Datasheets
- 2N3057A
NPN -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
2N3057A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 1A volts at its maximum.
2N3057A Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
2N3057A Applications
There are a lot of Microsemi Corporation
2N3057A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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