2N3055G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

700µA

JESD-609 Code :

e3

Packaging :

Tray

Collector Emitter Breakdown Voltage :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

REACH SVHC :

No SVHC

Number of Elements :

1

Operating Temperature :

-65°C~200°C TJ

Max Junction Temperature (Tj) :

200°C

Width :

26.67mm

Terminal Finish :

Tin (Sn)

Base Part Number :

2N3055

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Frequency :

2.5MHz

Height :

8.51mm

Polarity/Channel Type :

NPN

Transistor Type :

NPN

hFE Min :

20

Terminal Position :

BOTTOM

Factory Lead Time :

4 Weeks

Package / Case :

TO-204AA, TO-3

Collector Base Voltage (VCBO) :

100V

Collector Emitter Saturation Voltage :

3V

Current Rating :

15A

Emitter Base Voltage (VEBO) :

7V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

115W

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

Number of Pins :

2

Element Configuration :

Single

Transistor Application :

SWITCHING

Number of Terminations :

2

Transistor Element Material :

SILICON

Terminal Form :

PIN/PEG

Published :

2000

Weight :

4.535924g

Pbfree Code :

yes

Radiation Hardening :

No

Max Collector Current :

15A

ECCN Code :

EAR99

Gain Bandwidth Product :

2.5MHz

Length :

39.37mm

Max Power Dissipation :

115W

Voltage - Rated DC :

60V

Collector Emitter Voltage (VCEO) :

60V

Transition Frequency :

2.5MHz

Lead Free :

Lead Free

Mounting Type :

Through Hole

Surface Mount :

No

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Case Connection :

COLLECTOR