2N3055AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

2

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

200V

Power Dissipation :

115W

Terminal Form :

PIN/PEG

Frequency :

6MHz

Emitter Base Voltage (VEBO) :

7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

0.8MHz

Published :

2005

Number of Terminations :

2

Max Power Dissipation :

115W

Transistor Application :

SWITCHING

Pin Count :

2

Collector Emitter Breakdown Voltage :

60V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Weight :

4.535924g

hFE Min :

10

Width :

8.509mm

Number of Elements :

1

Terminal Position :

BOTTOM

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Voltage - Rated DC :

60V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Length :

39.37mm

Max Collector Current :

15A

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Height :

26.67mm

Operating Temperature :

-65°C~200°C TJ

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Factory Lead Time :

13 Weeks

Package / Case :

TO-204AA, TO-3

Radiation Hardening :

No

Surface Mount :

No

Current - Collector Cutoff (Max) :

700µA

Gain Bandwidth Product :

6MHz

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

1.1V

Collector Emitter Voltage (VCEO) :

60V

Current Rating :

15A

Packaging :

Tray

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

5V @ 7A, 15A

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 4A 2V

Base Part Number :

2N3055

Transistor Type :

NPN