2N3055AG
- Mfr.Part #
- 2N3055AG
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO204
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 15A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 115W
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-204AA, TO-3
- Length :
- 39.37mm
- Number of Pins :
- 2
- Packaging :
- Tray
- Number of Terminations :
- 2
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Width :
- 8.509mm
- hFE Min :
- 10
- Voltage - Rated DC :
- 60V
- Gain Bandwidth Product :
- 6MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 200V
- Height :
- 26.67mm
- Power Dissipation :
- 115W
- Published :
- 2005
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 2
- Frequency :
- 6MHz
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 0.8MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Current Rating :
- 15A
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 700µA
- Terminal Form :
- PIN/PEG
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.1V
- Number of Elements :
- 1
- Weight :
- 4.535924g
- Base Part Number :
- 2N3055
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- 2N3055AG

NPN -65°C~200°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3055AG Overview
This device has a DC current gain of 10 @ 4A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 5V @ 7A, 15A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 0.8MHz.A maximum collector current of 15A volts is possible.
2N3055AG Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
2N3055AG Applications
There are a lot of ON Semiconductor
2N3055AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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